absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave,50 to 60hz,gate open 400 v i t(av) average on-state current half sine wave : t c = 112 c 0.5 a i t(rms) r.m.s on-state current 180 conduction angle 0.8 a i tsm surge on-state current 1/2 cycle, 60hz, sine wave non-repetitive , t = 8.3ms 10 a i 2 t i 2 t for fusing t = 8.3ms 0.415 a 2 s p gm forward peak gate power dissipation t a = 25 c, pulse width ? 1.0 k 2w p g(av) forward average gate power dissipation t a = 25 c, t = 8.3ms 0.1 w i fgm forward peak gate current t a = 25 c, pulse width ? 1.0 k 1a v rgm reverse peak gate voltage t a = 25 c, pulse width ? 1.0 k 5.0 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mck100-6 april, 2005. rev.0 features repetitive peak off-state voltage : 400v r.m.s on-state current ( i t(rms) = 0.8 a ) low on-state voltage (1.2v(typ.)@ i tm ) available with tape & reel general description sensitive-gate triggering thyris tor is suitable for the applica- tion where gate current limited such as small motor control, gate driver for large thyristor, sensing and detecting circuits. 1/5 sot- 89 1 2 3 sensitive gate silicon controlled - rectifiers 2. anode 3.gate 1.cathode symbol ? ? ? ? i t(rms) = 0.8 a i tsm = 10 a bv drm = 600v copyright @ d&i semiconductor co., ltd., all rights reserved.
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v ak = v drm or v rrm ; r gk = 1000 ? t c = 25 c t c = 125 c 10 200 u v tm peak on-state voltage (1) ( i tm = 1 a, peak ) 1.2 1.7 v i gt gate trigger current (2) v ak = 6 v, r l =100 ? t c = 25 c t c = - 40 c 200 500 u v gt gate trigger voltage (2) v d = 7 v, r l =100 ? t c = 25 c t c = - 40 c 0.8 1.2 v v gd non-trigger gate voltage (1) v ak = 12 v, r l =100 ? t c = 125 c 0.2 v dv/dt critical rate of rise off-state voltage v d = rated v drm , exponential wave- form , r gk = 1000 ? t j = 125 c 500 800 v/ k di/dt critical rate of rise on-state current i pk = 20a ; p w = 10 k ; di g /dt = 1a/ k igt = 20ma 50 a/ k i h holding current v ak = 12 v, gate open initiating curent = 20ma t c = 25 c t c = - 40 c 2 5.0 10 ma r th(j-c) thermal impedance junction to case 15 c/w r th(j-a) thermal impedance junction to ambient 125 c/w mck100-6 2/5 ? notes : 1. pulse width ? 1.0 ms , duty cycle ? 1% 2. does not include r gk in measurement.
-50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) junction temperature[ o c] 10 -2 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 r (j-c) transient thermal impedance [ o c/w] time (sec) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 -1 10 0 10 1 125 o c 25 o c on-state current [a] on-state voltage [v] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 i gm (1a) v gd (0.2v) p g(av) (0.1w) p gm (2w) v gm (5v) 25 o c gate voltage [v] gate current [ma] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 20 40 60 80 100 120 140 160 = 180 o max. allowable case temperature [ o c] average on-state current [a] mck100-6 ? : conduction angle 360 ? 2 tt 3/5 -50 0 50 100 150 0.1 1 10 v gt (t o c) v gt (25 o c) junction temperature[ o c] fig 1. gate characteristics fi g 2. maximum case temperature fig 3. typical forward voltage fig 4. thermal response fig 6. typical gate trigger current vs. junction temperature fig 5. typical gate trigger voltage vs. junction temperature
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 = 180 o = 120 o = 90 o = 60 o = 30 o max. average power dissipation [w] average on-state current [a] -50 0 50 100 150 0.1 1 10 i h (t o c) i h (25 o c) junction temperature[ o c] mck100-6 4/5 fig 8. power dissipation fig 7. typical holding current
dim. mm inch min. typ. max. min. typ. max. a 1.40 1.60 0.055 0.063 b 0.36 0.56 0.014 0.022 b1 0.32 0.52 0.013 0.020 c 0.35 0.44 0.014 0.017 c1 0.35 0.44 0.014 0.017 d 4.40 4.60 0.173 0.181 d1 1.40 1.80 0.055 0.071 e 2.30 2.60 0.091 0.102 e 1.50 0.060 e1 2.90 3.10 0.114 0.122 h 3.94 4.25 0.155 0.167 l 0.90 1.10 0.035 0.043 r 0.25 0.010 mck100-6 5/5 sot- 89 package dimension 1. cathode 2. anode 3. gate 1 2 3
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